Phase change memory device with thermal insulating layers

Details Phase change memory device with thermal insulating layers Phase change memory device with thermal insulating layers

2008-06-24

2008-06-24

Sefer, A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S002000, C257S049000, C257SE29080, C257SE31029, C438S482000

Reexamination Certificate

active

07391050

ABSTRACT:
A memory device is described an active material configured to be placed in a more or less conductive state by means of appropriate switching processes. The active material is positioned between a material having low thermal conductivity or material layers having low thermal conductivity.

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A. Pirovano et al., “Scaling Analysis of Phase-Change Memory Technology”, IEEE 2003, pp. 29.6.1-29.6.4.

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