Phase change memory device with heater electrodes having...

Details Phase change memory device with heater electrodes having... Phase change memory device with heater electrodes having...

2008-12-29

2010-12-14

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S537000, C257S538000

Reexamination Certificate

active

07851887

ABSTRACT:
A phase change memory device includes a semiconductor substrate having a conductive region, a heater electrode formed on the semiconductor substrate and including a connection element which is composed of carbon nanotubes electrically connected with the conductive region, and a phase change pattern layer contacting the connection element of the heater electrode.

REFERENCES:
patent: 2004/0219773 (2004-11-01), Choi et al.
patent: 2009/0225588 (2009-09-01), Czubatyj et al.
patent: 100674144 (2007-01-01), None

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