Phase change memory device to prevent thermal cross-talk and...

Details Phase change memory device to prevent thermal cross-talk and... Phase change memory device to prevent thermal cross-talk and...

2007-10-12

2011-11-01

Phung, Anh (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S005000, C257SE47001, C257SE29002

Reexamination Certificate

active

08049198

ABSTRACT:
A phase change memory device for preventing thermal cross-talk includes lower electrodes respectively formed in a plurality of phase change cell regions of a semiconductor substrate. A first insulation layer is formed on the semiconductor substrate including the lower electrodes having holes for exposing the respective lower electrodes. Heaters are formed on the surfaces of the respective holes to contact the lower electrodes. A second insulation layer is formed to fill the holes in which the heaters are formed. A mask pattern is then formed on the first and second insulation layers, including the heaters, to have openings that expose portions of the respective heaters having a constant pitch. A phase change layer is formed on the mask pattern including the exposed portions of the heaters and the first and second insulation layers and subsequently, upper electrodes are formed on the phase change layer.

REFERENCES:
patent: 2005/0064606 (2005-03-01), Pellizzer et al.
patent: 2006/0073631 (2006-04-01), Karpov et al.
patent: 2007/0097738 (2007-05-01), Asano et al.
patent: 2007/0120107 (2007-05-01), Hayakawa
patent: 2007/0152205 (2007-07-01), Chen
patent: 10-0639206 (2006-10-01), None
patent: 10-0795908 (2008-01-01), None
A. Pirovano, et al; “μTrench Phase-Change Memory Cell Engineering and Optimization”, Proceedings of ESSDERC, Grenoble, France, 2005, pp. 313-316.

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