Phase-change memory device, phase-change channel transistor,...

Details Phase-change memory device, phase-change channel transistor,... Phase-change memory device, phase-change channel transistor,...

2011-03-01

2011-03-01

Bryant, Kiesha R (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S003000, C257SE45002

Reexamination Certificate

active

07897958

ABSTRACT:
To reduce the voltage required to cause a phase transition from an amorphous phase to a crystalline phase, a phase-change memory device (1) comprises: a first electrode (6); a second electrode (8); and a memory layer (14) provided between the first (6) and second (8) electrodes, wherein the memory layer (14) includes at least a first layer (10) formed from a phase-change material which is stable in either the amorphous phase or the crystalline phase at room temperature, and a second layer (12) formed from a resistive material, and wherein the resistance value of the second layer (12) is smaller than the resistance value of the first layer (10) in the amorphous phase, but is larger than the resistance value of the first layer (10) in the crystalline phase.

REFERENCES:
patent: 6961277 (2005-11-01), Moore et al.
patent: 2004/0113135 (2004-06-01), Wicker
patent: 2006/0077706 (2006-04-01), Li et al.
patent: 2005-93619 (2005-04-01), None
patent: 2006-511973 (2006-04-01), None
patent: 2004/057676 (2004-07-01), None
Japanese Office Action issued on Oct. 16, 2008 in corresponding Japanese Patent Application No. 2006-211262.

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