Semiconductor device manufacturing: process – Having selenium or tellurium elemental semiconductor component
Reexamination Certificate
2011-05-10
2011-05-10
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Having selenium or tellurium elemental semiconductor component
C438S533000, C438S800000, C257S002000, C257SE21002
Reexamination Certificate
active
07939365
ABSTRACT:
A phase change memory (PCM) device, a manufacturing technique of making the PCM device, and a way of operating the PCM device is presented. The PCM device is structured to have a silicon on insulator type substrate that provides an advantage of thermally insulating the active area of the PCM device without the need for an additional insulation layer. The PCM device has a phase change resistor PCR that has one terminal connected to a word line and the other terminal connected in common to the N-terminals of two PN diodes in which the P-terminals are connected in common to the bit line. As a result, a current flowing through the phase change resistor PCR is doubled which results in doubling the cell driving capacity.
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patent: 6903361 (2005-06-01), Gilton
patent: 2003/0132501 (2003-07-01), Gill et al.
patent: 2006/0243973 (2006-11-01), Gilton
patent: 2005-0058931 (2005-06-01), None
patent: 1020060001060 (2006-01-01), None
Hong Suk Kyoung
Kang Hee Bok
Hynix / Semiconductor Inc.
Ladas & Parry LLP
Novacek Christy L
Smith Zandra
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