Phase change memory device in which a phase change layer is...

Details Phase change memory device in which a phase change layer is... Phase change memory device in which a phase change layer is...

2011-03-22

2011-03-22

Matthews, Colleen A (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE45001, C365S163000

Reexamination Certificate

active

07910908

ABSTRACT:
A phase change memory device includes a semiconductor substrate having a plurality of phase change cell regions; a lower electrode formed in each of the phase change cell regions on the semiconductor substrate; an insulation layer formed on the semiconductor substrate to cover the lower electrode and defined with a contact hole which exposes the lower electrode; a heater formed in the contact hole; a conductive pattern formed on the insulation layer to be spaced apart from the heater; a phase change layer formed on the heater, the conductive pattern, and portions of the insulation layer between the heater and the conductive pattern; and an upper electrode formed on the phase change layer. This phase change memory device allows the phase change layer to be stably formed and prevents the phase change layer from lifting.

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