Phase change memory device in which a distance between a...

Details Phase change memory device in which a distance between a... Phase change memory device in which a distance between a...

2007-09-14

2009-10-27

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S005000, C257SE29002, C438S102000, C438S103000, C365S163000

Reexamination Certificate

active

07608850

ABSTRACT:
A phase change memory device includes a semiconductor substrate having active regions and an isolation structure; gate lines extending in a direction perpendicular to the active regions; a source region and a drain region formed in a surface of each active region; a dot type lower electrode including a first contact plug formed in the drain region; second contact plugs formed in the source region and the isolation structure forming a line parallel to the gate line; a lower electrode contact formed on the lower electrode; a phase change layer and an upper electrode formed on the lower electrode contact; an upper electrode contact formed on the upper electrode; contacts for ground lines, formed between the active regions to come into contact with the second contact plugs; a bit line formed in the active region; and ground lines formed between the active regions.

REFERENCES:
patent: 2006/0278899 (2006-12-01), Chang et al.

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