Phase change memory device having dielectric layer for...

Details Phase change memory device having dielectric layer for... Phase change memory device having dielectric layer for...

2008-12-08

2010-12-28

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE45002

Reexamination Certificate

active

07858960

ABSTRACT:
A phase change memory device includes a semiconductor substrate having an impurity region and an interlayer dielectric applying a tensile stress formed on the semiconductor substrate and having contact holes exposing the impurity region. Switching elements are formed in the contact holes; and sidewall spacers interposed between the switching elements and the interlayer dielectric and formed as a dielectric layer applying a compressive stress.

REFERENCES:
patent: 6121164 (2000-09-01), Yieh et al.
patent: 7651906 (2010-01-01), Park et al.
patent: 1020080078972 (2008-08-01), None

Affiliated with

Also associated with

Rating

Phase change memory device having dielectric layer for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Phase change memory device having dielectric layer for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase change memory device having dielectric layer for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4192991