Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2011-04-19
2011-04-19
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257SE45002, C257SE47001
Reexamination Certificate
active
07928423
ABSTRACT:
A phase change memory device having an inversely tapered bottom electrode and a method for forming the same is presented. The phase change memory device includes a semiconductor substrate, an insulation layer, a bottom electrode contact and a phase change pattern. The insulation layer includes a bottom electrode contact hole having an insulation sidewall spacer such that the bottom electrode contact hole has an upper portion diameter that is smaller than a lower portion diameter. The bottom electrode contact is formed within the bottom electrode contact hole. The phase change pattern is formed on the bottom electrode contact.
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Park Jun Hyung
Shim Kew Chan
Hynix / Semiconductor Inc.
Ladas & Parry LLP
Soward Ida M
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