Phase change memory device having a word line contact

Details Phase change memory device having a word line contact Phase change memory device having a word line contact

2011-03-01

2011-03-01

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S003000, C257S005000, C257SE45002, C438S622000, C438S637000, C438S672000

Reexamination Certificate

active

07897959

ABSTRACT:
A phase change memory device having a word line contact includes an N+ base layer formed in a surface of a semiconductor substrate. A word line is formed over the N+ base layer. The word line contact is formed to connect the N+ base layer to the word line. The word line contact includes a first contact plug, a barrier layer formed on the first contact plug, and a second contact plug formed on the barrier layer coaxially with the first contact plug. The barrier layer prevents unwanted etching of the first contact plug when the second contact plug is being formed.

REFERENCES:
patent: 2006/0024950 (2006-02-01), Choi et al.
patent: 1020010090154 (2001-10-01), None
patent: 1020040077156 (2004-09-01), None
patent: 10-0705949 (2007-04-01), None
patent: 1020080011791 (2008-02-01), None

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