Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2007-07-03
2007-07-03
Menz, Douglas M. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S003000, C257S004000, C257S005000, C257S276000, C257S522000
Reexamination Certificate
active
10979411
ABSTRACT:
A phase change memory device, and method of making the same, that includes a trench formed in insulation material having opposing sidewalls that are inwardly sloping with trench depth. A first electrode is formed in the trench. Phase change memory material is formed in electrical contact with the first electrode. A second electrode is formed in electrical contact with the phase change memory material. Voids are formed in the insulation material to impede heat from the phase change memory material from conducting away therefrom. The voids are formed in pairs, with either a portion of the phase change memory material or the second electrode disposed between the voids.
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Menz Douglas M.
Silicon Storage Technology, Inc.
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