Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2007-02-06
2007-02-06
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S003000, C257S773000, C257S751000, C257S296000, C257SE29170
Reexamination Certificate
active
11000471
ABSTRACT:
Disclosed are a phase-change memory device and its manufacturing method, which can reduce a contact area between a bottom electrode and a phase-change layer, thereby reducing the quantity of current necessary for phase change. The phase-change memory device comprises: a first oxide layer formed on a dielectric interlayer and a bottom electrode on a substrate and having a contact hole for exposing the bottom electrode formed in the first oxide layer; a spacer formed on a side surface of the contact hole; a phase-change layer formed on the spacer and the bottom electrode while forming a shape of another spacer; a second oxide layer filling in the contact hole while exposing an upper portion of the phase-change layer; and a top electrode formed on the first oxide layer while being in contact with the upper portion of the phase-change layer.
REFERENCES:
patent: 2003/0047762 (2003-03-01), Lowrey
patent: 2005/0130414 (2005-06-01), Choi et al.
patent: 10-20040032955 (2004-04-01), None
Hynix / Semiconductor Inc.
Nguyen Joseph
Parker Kenneth
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