Phase change memory device and method of manufacturing the...

Details Phase change memory device and method of manufacturing the... Phase change memory device and method of manufacturing the...

2006-09-11

2010-06-01

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257SE45002, C365S148000

Reexamination Certificate

active

07728321

ABSTRACT:
The invention provides a novel structure of a phase change memory device. In the phase change memory device of the invention, an electrode acting as a radiating fin does not exit immediately above a phase change area of a phase change layer (115). A heater electrode (111) and landing electrode layer (113a,114a) both contact the bottom of the phase change layer (115) made of GST. The landing electrode layer (113a,114a) contacts the bottom of the phase change layer (115) to partially overlap in a region off from a portion immediately above the contact face (Y) of the phase change layer and heater electrode. The contact electrode (116, 118) is directly connected to the landing electrode layer (113a,114a) in a portion off from a portion immediately above the heater electrode (111). The phase change layer of GST or the like does not exist immediately below the contact electrode.

REFERENCES:
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patent: 2004/0245554 (2004-12-01), Oh et al.
patent: 2005/0098811 (2005-05-01), Ogiwara
patent: 2005/0174861 (2005-08-01), Kim et al.
patent: 2003-332529 (2003-11-01), None
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patent: 2005-150243 (2005-06-01), None
patent: 2005-159325 (2005-06-01), None
Japanese Office Action with partial English Translation, issued in Japanese Patent Application No. JP 2005-264484, dated Mar. 17, 2010.

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