Phase-change memory device and method of manufacturing same

Details Phase-change memory device and method of manufacturing same Phase-change memory device and method of manufacturing same

2008-05-06

2008-05-06

Sefer, A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S528000, C257SE45002, C438S142000, C438S197000, C438S238000

Reexamination Certificate

active

11563643

ABSTRACT:
A phase-change memory device has a phase-change layer, a heater electrode having an end held in contact with the phase-change layer, a contact plug of different kinds of material having a first electrically conductive material plug made of a first electrically conductive material and held in contact with the other end of the heater electrode, and a second electrically conductive material plug made of a second electrically conductive material having a specific resistance smaller than the first electrically conductive material, the first electrically conductive material plug and the second electrically conductive material plug being held in contact with each other through at least respective side surfaces thereof, the heater electrode and the second electrically conductive material plug being not in overlapping relation to each other, and an electrically conductive layer electrically connected to the second electrically conductive material plug.

REFERENCES:
patent: 2006/0076641 (2006-04-01), Cho et al.
patent: 2003-332529 (2003-11-01), None

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