Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2008-07-08
2011-11-01
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257SE27104, C257SE47001
Reexamination Certificate
active
08049199
ABSTRACT:
A phase change memory device and a method for manufacturing the same. The method includes the steps of defining bottom electrode contact holes by removing portions of an insulation layer, to expose bottom electrodes, on a semiconductor substrate on which the bottom electrodes and the insulation layer are sequentially formed; forming amorphous silicon spacers on inner sidewalls of the bottom electrode contact holes; and forming bottom electrode contacts in the bottom electrode contact holes.
REFERENCES:
patent: 2006/0091476 (2006-05-01), Pinnow et al.
patent: 2007/0152205 (2007-07-01), Chen
patent: 1020050059400 (2005-06-01), None
patent: 1020070079647 (2007-08-01), None
Chae Su Jin
Chang Heon-Yong
Eun Yong Seok
Lee Keum-Bum
Lee Min-Yong
Baker & McKenzie LLP
Dickey Thomas L
Erdem Fazli
Hynix / Semiconductor Inc.
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