Phase change memory device and method for manufacturing the...

Details Phase change memory device and method for manufacturing the... Phase change memory device and method for manufacturing the...

2009-04-29

2011-12-06

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257S005000, C257SE29002, C438S102000, C438S103000, C365S163000

Reexamination Certificate

active

08071968

ABSTRACT:
A phase change memory device and a method of manufacturing the same are presented. The phase change memory device includes a silicon substrate, a first insulation layer, cell switching elements, heaters, a gate, a second insulation layer, a barrier layer, a phase change layer and top electrodes. The first insulation layer has first holes. The cell switching elements are in the first holes. The heaters are on the cell switching elements. The gate is higher than the cell switching elements. The second insulation layer having second holes which expose the heaters, and exposes a hard mask layer of the gate. The barrier layer is on sidewalls of the second holes and on the second insulation layer. The phase change layer is formed in and over the second holes in which the barrier layer is formed. The top electrodes are formed on the phase change layer.

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