Phase change memory device and method for manufacturing the...

Details Phase change memory device and method for manufacturing the... Phase change memory device and method for manufacturing the...

2008-12-30

2011-11-15

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S910000, C257SE47001, C365S163000

Reexamination Certificate

active

08058637

ABSTRACT:
A phase change memory device includes a semiconductor substrate having a first conductivity type well An isolation structure is formed in the semiconductor substrate having the first conductivity type well to define active regions. Second conductivity type high concentration areas are formed in surfaces of the active regions. Insulation patterns are formed under the second conductivity type high concentration areas to insulate the second conductivity type high concentration areas from the first conductivity type well. A plurality of vertical diodes are formed on the second conductivity type high concentration areas which are insulated from the first conductivity type well.

REFERENCES:
patent: 5359219 (1994-10-01), Hwang
patent: 7589367 (2009-09-01), Oh et al.
patent: 2007/0173010 (2007-07-01), Lee et al.
patent: 2009/0161406 (2009-06-01), Chuang et al.
patent: 1020060094424 (2006-08-01), None
patent: 1020090088009 (2009-08-01), None

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