Phase change memory device and method for fabricating the same

Details Phase change memory device and method for fabricating the same Phase change memory device and method for fabricating the same

2007-11-15

2010-02-02

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S005000, C257SE29276, C438S900000, C365S100000, C365S148000, C338S013000

Reexamination Certificate

active

07655941

ABSTRACT:
A phase change memory device comprising a substrate. A plurality of bottom electrodes isolated from each other is on the substrate. An insulating layer crosses a portion of the surfaces of any two of the adjacent bottom electrodes. A pair of phase change material spacers is on a pair of sidewalls of the insulating layer, wherein the pair of the phase change material spacers is on any two of the adjacent bottom electrodes, respectively. A top electrode is on the insulating layer and covers the phase change material spacers.

REFERENCES:
patent: 6501111 (2002-12-01), Lowrey
patent: 7135727 (2006-11-01), Lee et al.
patent: 2008/0191186 (2008-08-01), Lung et al.
patent: 1960020 (A) (2007-05-01), None
patent: 1339111 (2003-08-01), None

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