Phase change memory device and manufacturing method

Details Phase change memory device and manufacturing method Phase change memory device and manufacturing method

2011-08-30

2011-08-30

Nguyen, Dao H (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S092000, C438S096000, C438S097000, C438S466000, C257S002000, C257S003000, C257S004000, C257S005000, C257SE27004, C257SE31092, C257SE45002

Reexamination Certificate

active

08008114

ABSTRACT:
A phase change memory device comprises a photolithographically formed phase change memory cell having first and second electrodes and a phase change element positioned between and electrically coupling the opposed contact elements of the electrodes to one another. The phase change element has a width, a length and a thickness. The length, the thickness and the width are less than a minimum photolithographic feature size of the process used to form the phase change memory cell. The size of the photoresist masks used in forming the memory cell may be reduced so that the length and the width of the phase change element are each less than the minimum photolithographic feature size.

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