Phase change memory device and fabrication method thereof

Details Phase change memory device and fabrication method thereof Phase change memory device and fabrication method thereof

2008-12-04

2011-12-06

Louie, Wai Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S003000

Reexamination Certificate

active

08071970

ABSTRACT:
A phase change memory device comprising an electrode, a phase change layer crossing and contacting the electrode at a cross region thereof, and a transistor comprising a source and a drain, wherein the drain of the transistor electrically connects the electrode or the phase change layer is disclosed.

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