Phase change memory device and fabrication method thereof

Details Phase change memory device and fabrication method thereof Phase change memory device and fabrication method thereof

2011-03-29

2011-03-29

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S343000, C257S377000, C257S382000, C257SE29120, C257SE29121, C257SE29258

Reexamination Certificate

active

07915602

ABSTRACT:
A phase change memory device is provided in which the area of contact between phase change material and heater electrode is reduced to suppress current required for heating and a phase change region is formed directly on a contact to raise the degree of integration. The device comprises a heater electrode in which the lower part thereof is surrounded by a side wall of a first insulating material and the upper part thereof protruding from the side wall has a sharp configuration covered by a second insulating material except for a part of the tip end thereof, and the exposed tip end is coupled to the phase change material layer.

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