Phase change memory device and fabricating method

Details Phase change memory device and fabricating method Phase change memory device and fabricating method

2008-11-20

2010-12-14

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Having selenium or tellurium elemental semiconductor component

C438S095000, C438S103000, C257S002000, C257S003000, C257S004000, C257S005000

Reexamination Certificate

active

07851253

ABSTRACT:
A phase change memory device is provided. The phase change memory device includes a substrate with a first electrode layer formed thereon. A first phase change memory structure is on the first electrode layer and electrically connected to the first electrode layer. A second phase change memory structure is on the first phase change memory structure and electrically connected to the first phase change memory structure, wherein the first or second phase change memory structure includes a cup-shaped heating electrode. A first insulating layer covers a portion of the cup-shaped heating electrode along a first direction. A first electrode structure covers a portion of the first insulating layer and the cup-shaped heating electrode along a second direction. The first electrode structure includes a pair of phase change material sidewalls on a pair of sidewalls of the first electrode structure and covering a portion of the cup-shaped heating electrode.

REFERENCES:
patent: 6501111 (2002-12-01), Lowrey
patent: 2004/0197947 (2004-10-01), Fricke et al.
patent: 2005/0093022 (2005-05-01), Lung
patent: 2007/0152205 (2007-07-01), Chen
patent: 1339111 (2002-02-01), None

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