Phase change memory device

Details Phase change memory device Phase change memory device

2006-07-11

2006-07-11

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C365S163000

Reexamination Certificate

active

07075131

ABSTRACT:
A semiconductor device includes a first memory cell having a substrate, an insulation layer disposed over the substrate, a first polysilicon gate formed over the insulation layer, at least one oxide spacer formed contiguous with one vertical sidewall of the first polysilicon gate, a silicide formed over a horizontal surface of the first polysilicon gate, a first phase change layer formed over a portion of the silicide, contiguous with the oxide spacer, and over a portion of the insulation layer, and a first diffused region formed in the substrate. The first phase change layer is formed above the first diffused region. A second diffused region is formed spaced-apart from the first diffused region in the substrate.

REFERENCES:
patent: 3271591 (1966-09-01), Ovshinsky
patent: 4599705 (1986-07-01), Holmberg et al.
patent: 2001/0022371 (2001-09-01), Rhodes

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