Phase change memory device

Details Phase change memory device Phase change memory device

2011-03-15

2011-03-15

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE45002, C257SE27078, C257SE29325, C365S163000

Reexamination Certificate

active

07906774

ABSTRACT:
A phase change memory device is disclosed, including a substrate, a phase change layer over the substrate, a first electrode electrically connecting a first side of the phase change layer, a second electrode electrically connecting a second side of the phase change layer, wherein the phase change layer composes mainly of gallium (Ga), antimony (Sb) and tellurium (Te) and unavoidable impurities, having the composition range of GaxTeySbz, 5<x<40; 8≦y<48; 42<z<80; and x+y+z=100.

REFERENCES:
patent: 7321130 (2008-01-01), Lung et al.
patent: 2005/0136209 (2005-06-01), Chin et al.
patent: 2007/0109843 (2007-05-01), Lung et al.
patent: 2007/0190696 (2007-08-01), Happ
patent: 2007/0272987 (2007-11-01), Kang et al.
patent: 101101962 (2008-01-01), None
patent: WO 2004/057684 (2004-07-01), None
Yin et al., “Memory Effect in Metal- Chalcogenide -Metal Structure”, 2006, Japanese Journal of Applied Physics, vol. 45, No. 6A, pp. 4951-4954).
Lezal et al., “Chalcogenide glasses for optical and photonics applications”, 2004, Chalcogenide Letters, vol. 1, No. 1, pp. 11-15.
Moharram et al., “Pre-crystallization and crystallization kinetics of some Se-Te-Sb glasses”, 2002, Physica B, vol. 324, pp. 344-351.
(see chalcogenide (1992) in Academic Press Dictionary of Science and Technology. Retrieved from http://www.credoreference.com/entry/apdst/chalcogenide).
Yamada et al., “Rapid-Phase Transitions of GeTe-Sb2-Te3Pseudobinary Amorphous Thin Films for an Optical Disk Memory,” J. Appl. Phys. 69 (5), Mar. 1, 1991, pp. 2849-2856, American Institute of Physics, US.
Huai-Yu Cheng et al., “Characteristics of Ga-Sb-Te Films for Phase-Change Memory,” IEEE Transactions on Magnetics, Feb. 2007, vol. 43, No. 2, IEEE, US.
Xiu-Lan Cheng., “Simulation on A Novel Ga-doped Phase Change Memory for Next Generation Embedded Non-Volatile Memory Applicaiton,” IEEE/SEMI Advanced Semiconductor Manufacturing Conference, May 2008, P. 43-48, IEEE, US.

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