Phase change memory comprising a low-voltage column decoder

Details Phase change memory comprising a low-voltage column decoder Phase change memory comprising a low-voltage column decoder

2007-09-05

2009-10-06

Yoha, Connie C (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S230030, C365S230010, C365S231000, C365S189011

Reexamination Certificate

active

07599218

ABSTRACT:
An integrated circuit includes a non-volatile memory having memory cells, a memory cell selection circuit having selection blocks, a first device supplying a first voltage applicable to memory cells, a second device supplying a second voltage applicable to memory cells. Each memory cell selection block includes a first selection sub-block to link the memory cell to the first device and a second selection sub-block to link the memory cell to the second device. The first sub-block includes MOS transistors of a first type of conductivity, and the second sub-block includes MOS transistors of a second type of conductivity. Application may be particularly but not exclusively to phase change memories.

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patent: 1 450 373 (2004-08-01), None
patent: 2007/010115 (2007-01-01), None

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