Phase change memory cells with dual access devices

Details Phase change memory cells with dual access devices Phase change memory cells with dual access devices

2011-01-04

2011-01-04

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257SE29330

Reexamination Certificate

active

07863655

ABSTRACT:
A self aligning memory device, with a memory element switchable between electrical property states by the application of energy, includes a substrate and word lines, at least the sides of the word lines covered with a dielectric material which defines gaps. An access device within a substrate has a first terminal under a second gap and second terminals under first and third gaps. First and second source lines are in the first and third gaps and are electrically connected to the second terminals. A first electrode in the second gap is electrically connected to the first terminal. A memory element in the second gap is positioned over and electrically connected to the first electrode. A second electrode is positioned over and contacts the memory element. The first contact, the first electrode, the memory element and the second electrode are self aligning. A portion of the memory element may have a sub lithographically dimensioned width.

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