Phase change memory cell with tubular heater and...

Details Phase change memory cell with tubular heater and... Phase change memory cell with tubular heater and...

2006-04-06

2008-10-21

Landau, Matthew C. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S004000, C257SE45002, C257SE45003, C438S102000, C438S103000

Reexamination Certificate

active

07439536

ABSTRACT:
A phase change memory cell includes a phase change region of a phase change material, a heating element of a resistive material, arranged in contact with the phase change region and a memory element formed in said phase change region at a contact area with the heating element. The contact area is in the form of a frame that has a width of sublithographic extent and, preferably, a sublithographic maximum external dimension. The heating element includes a hollow elongated portion which is arranged in contact with the phase change region.

REFERENCES:
patent: 6969866 (2005-11-01), Lowrey et al.
patent: 2002/0195621 (2002-12-01), Maimon
patent: 2003/0001230 (2003-01-01), Lowrey
patent: 2003/0214856 (2003-11-01), Pellizzer et al.
patent: 2003/0219924 (2003-11-01), Bez et al.
patent: 2004/0114317 (2004-06-01), Chiang et al.
patent: 2004/0238920 (2004-12-01), Hashimoto et al.
patent: 1675183 (2006-06-01), None
patent: WO 02/09206 (2002-01-01), None

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