Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2005-11-29
2010-12-14
Nguyen, Thinh T (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S003000, C257S004000, C257S749000
Reexamination Certificate
active
07851828
ABSTRACT:
The present invention provides a non-volatile phase change memory cell containing an electrode contact layer disposed between a metal electrode layer and a phase change material layer, the electrode contact layer being formed of a transparent conducting oxide-based material which has a high electric conductivity, a low thermal conductivity and a good thermal stability. A non-volatile phase change memory cell according to the present invention may be utilized to reduce the electric power needed for reset and set operation.
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Ahn Dong-Ho
Cheong Byung-ki
Jeong Jeung-hyun
Kang Dae-Hwan
Kim In Ho
Korea Institute of Science and Technology
Nguyen Thinh T
Seoul National University Industry Foundation
Sughrue & Mion, PLLC
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