Phase change memory cell with high read margin at low power...

Details Phase change memory cell with high read margin at low power... Phase change memory cell with high read margin at low power...

2007-05-08

2007-05-08

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S005000, C257S751000, C257SE31029

Reexamination Certificate

active

11101972

ABSTRACT:
A memory cell device includes a first electrode, phase-change material adjacent the first electrode, a second electrode adjacent the phase-change material, a diffusion barrier adjacent the phase-change material, and isolation material adjacent the diffusion barrier for thermally isolating the phase-change material. The diffusion barrier prevents diffusion of the phase-change material into the isolation material.

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