Phase change memory cell with heater and method therefor

Details Phase change memory cell with heater and method therefor Phase change memory cell with heater and method therefor

2008-01-18

2011-10-25

Landau, Matthew (Department: 2813)

Semiconductor device manufacturing: process

Having selenium or tellurium elemental semiconductor component

C438S682000, C257SE45002

Reexamination Certificate

active

08043888

ABSTRACT:
A method for forming a phase change memory cell (PCM) includes forming a heater for the phase change memory and forming a phase change structure electrically coupled to the heater. The forming a heater includes siliciding a material including silicon to form a silicide structure, wherein the heater includes at least a portion of the silicide structure. The phase change structure exhibits a first resistive value when in a first phase state and exhibits a second resistive value when in a second phase state. The silicide structure produces heat when current flows through the silicide structure for changing the phase state of the phase change structure.

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