Phase change memory cell structures and methods for...

Details Phase change memory cell structures and methods for... Phase change memory cell structures and methods for...

2011-04-12

2011-04-12

Stark, Jarrett J (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257SE45002

Reexamination Certificate

active

07923714

ABSTRACT:
Phase change memory cell structures and methods for fabricating the same are provided. An exemplary embodiment of a phase change memory cell structure includes a first electrode formed over a first dielectric layer. A second dielectric layer is formed over the first electrode. A conductive member is formed through the second dielectric layer and electrically contacting the first electrode, wherein the conductive member comprises a lower element and an upper element sequentially stacking over the first electrode, and the lower and upper elements comprises different materials. A phase change material layer is formed over the second dielectric layer, electrically contacting the conductive member. A second electrode is formed over the phase change material layer.

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Dae-Hwan Kang et al., “One-Dimensional Heat Conduction Model for an Electrical Phase Change Random Access Memory Device with an 8F2Memory Cell (F=0.15um),” Journal of Applied Physics, vol. 94, No. 5, Sep. 1, 2003, p. 3536-3542, American Institute of Physics, US.

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