Phase change memory cell on silicon-on insulator substrate

Details Phase change memory cell on silicon-on insulator substrate Phase change memory cell on silicon-on insulator substrate

2006-02-28

2006-02-28

Picardat, Kevin M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S577000, C257S588000, C438S005000, C438S102000

Reexamination Certificate

active

07005665

ABSTRACT:
The present invention includes a method for forming a phase change material memory device and the phase change memory device produced therefrom. Specifically, the phase change memory device includes a semiconductor structure including a substrate having a first doped region flanked by a set of second doped regions; a phase change material positioned on the first doped region; and a conductor positioned on the phase change material, wherein when the phase change material is a first phase the semiconductor structure operates as a bipolar junction transistor, and when the phase change material is a second phase the semiconductor structure operates as a field effect transistor.

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