Phase change memory cell including nanocomposite insulator

Details Phase change memory cell including nanocomposite insulator Phase change memory cell including nanocomposite insulator

2006-07-20

2008-11-18

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S314000, C257S004000, C257SE21003, C977S723000, C977S720000, C977S785000, C977S831000

Reexamination Certificate

active

07453081

ABSTRACT:
A memory cell includes a first electrode, a second electrode, storage material positioned between the first electrode and the second electrode, and a nanocomposite insulator contacting the storage material.

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patent: 10 2004 014 487 (2005-11-01), None
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Anzai et al., “Macroscopic Study on Etching Characteristics of Phase-change Recording Films”.

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