Phase change memory cell including multiple phase change...

Details Phase change memory cell including multiple phase change... Phase change memory cell including multiple phase change...

2011-07-05

2011-07-05

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S296000, C257S528000, C257S536000, C257S055000, C257S063000, C257SE45002

Reexamination Certificate

active

07973384

ABSTRACT:
A memory cell includes a first electrode, a second electrode, and a first portion of phase-change material contacting the first electrode. The memory cell includes a second portion of phase-change material contacting the second electrode and a third portion of phase-change material between the first portion and the second portion. A phase-change material composition of the third portion and the second portion gradually transitions from the third portion to the second portion.

REFERENCES:
patent: 4177475 (1979-12-01), Holmberg
patent: 6579760 (2003-06-01), Lung
patent: 6674115 (2004-01-01), Hudgens et al.
patent: 6838692 (2005-01-01), Lung
patent: 6856002 (2005-02-01), Moore et al.
patent: 6927410 (2005-08-01), Chen
patent: 6946673 (2005-09-01), Zonca et al.
patent: 7372725 (2008-05-01), Philipp et al.
patent: 2003/0137869 (2003-07-01), Kozicki
patent: 2004/0165422 (2004-08-01), Hideki et al.
patent: 2005/0029502 (2005-02-01), Hudgens
patent: 2005/0030800 (2005-02-01), Johnson et al.
patent: 2005/0051901 (2005-03-01), Chen
patent: 2005/0112896 (2005-05-01), Hamann et al.
patent: 2006/0046509 (2006-03-01), Gwan-Hyeob
patent: 9707550 (1997-02-01), None
Y.H. Ha et al., “An Edge Contact Type Cell for Phase Change RAM Featuring Very Low Power Consumption”, VLSI, 2003.
H. Horii et al., “A Novel Cell Technology Using N-doped GeSbTe Films for Phase Change RAM”, VLSI, 2003.
Y.N. Hwang et al., “Full Integration and Reliability Evaluation of Phase-Change RAM Based on 0.24μm-CMOS Technologies”, VLSI, 2003.
Y.N. Hwang et al., “Phase-Change Chalcogenide Nonvolatile RAM Completely Based on CMOS Technology”, IEEE, 2003.
C.W. Jeong et al., “Switching Current Scaling and Reliability Evaluation in PRAM”, NVSMW 2004.
S. Lai, “Current status of the phase change memory and its future”, IEDM, 2003.
S. Lai et al., “OUM—A 180 nm Nonvolatile Memory Cell Element Technology For Stand Alone and Embedded Applications”, IEDM, 2001.
F. Pellizzer et al., “Novel μTrench Phase-Change Memory Cell for Embedded and Stand-Alone Non-Volatile Memory Applications”, VLSI 2004.
Frank et al., “DC Conduction in Glasses in the Selenium-Germanium System”, Phys. Stat. Sol. (a), 16, pp. 623-632 (1973).
Ling et al., “A Novel Edge Contact Type Cell for Phase Change RAM Using N-doped GeSbTe Films”, Solid-State and Integrated Circuits Technology, 2004 Proceedings, vol. 1, pp. 707-710 (Oct. 18, 2004).

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