Phase change memory cell having a sidewall contact

Details Phase change memory cell having a sidewall contact Phase change memory cell having a sidewall contact

2006-11-17

2009-06-02

Purvis, Sue (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE21002, C257SE45002, C365S148000, C029S025030

Reexamination Certificate

active

07541609

ABSTRACT:
A memory cell includes a first electrode and a second electrode forming an opening. The opening is defined by a first sidewall, a second sidewall, and a surface extending between the first sidewall and the second sidewall. The memory cell includes phase change material contacting the first electrode and the first sidewall and the second sidewall. The memory cell includes isolation material electrically isolating the phase change material from the surface extending between the first sidewall and the second sidewall.

REFERENCES:
patent: 6891747 (2005-05-01), Bez et al.
patent: 6972430 (2005-12-01), Casagrande et al.
patent: 7026639 (2006-04-01), Cho et al.
patent: 7151300 (2006-12-01), Chang
patent: 2003/0219924 (2003-11-01), Bez et al.
patent: 2006/0003515 (2006-01-01), Chang
patent: 2006/0006374 (2006-01-01), Chang
patent: 2004-76040 (2004-08-01), None
Korean Office Action mailed Jul. 18, 2008.

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