Phase change memory cell and manufacturing method

Details Phase change memory cell and manufacturing method Phase change memory cell and manufacturing method

2006-06-14

2008-12-02

Au, Bac H (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S005000, C257S379000, C257S529000, C257S537000, C365S148000, C365S163000

Reexamination Certificate

active

07459717

ABSTRACT:
A phase change memory cell includes first and second electrodes having generally coplanar surfaces spaced apart by a gap and a phase change bridge electrically coupling the first and second electrodes. The phase change bridge may extend over the generally coplanar surfaces and across the gap. The phase change bridge has a higher transition temperature bridge portion and a lower transition temperature portion. The lower transition temperature portion comprises a phase change region which can be transitioned from generally crystalline to generally amorphous states at a lower temperature than the higher transition temperature portion. A method for making a phase change memory cell is also disclosed.

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