Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-10-26
2011-11-15
Kim, Jay C (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S209000, C257S246000, C257S248000, C257S296000, C257S298000, C257S300000, C257S529000, C257S536000, C257S903000, C257SE21661, C257SE21662, C257SE21680, C257SE27006, C257SE27098, C257SE31029
Reexamination Certificate
active
08058702
ABSTRACT:
A phase change memory cell is disclosed, including a first electrode and a second electrode, and a plurality of recording layers disposed between the first and second electrodes. The phase of an active region of each of the recording layers can be changed to a crystalline state or an amorphous state by current pulse control and hence respectively has crystalline resistance or amorphous resistance. At least two of the recording layers have different dimensions such that different combinations of the crystalline and amorphous resistance result in at least three different effective resistance values between the first and second electrodes. The phase change memory cell can be realized with the same material of the recording layers and thus can be fabricated with simple and currently developed CMOS fabrication process technologies. Furthermore, the phase change memory is easy to control due to large current programming intervals.
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Kim Jay C
Nanya Technology Corporation
Winbond Electronics Corp.
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