Phase change memory and phase change recording medium

Details Phase change memory and phase change recording medium Phase change memory and phase change recording medium

2006-10-24

2006-10-24

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S004000, C257SE45002

Reexamination Certificate

active

07126149

ABSTRACT:
A phase change memory comprises: a substrate; an insulation film formed on a main surface of the substrate; a first electrode deposited on the insulation film; a phase change recording film deposited on the first electrode; and a second electrode deposited on the phase change recording film. The phase change recording film contains at least two of Ge, Sb and Te as main constituting elements thereof. The first electrode comprises material of group of Ti, Si and N, or group of Ta, Si and N as main constituting material thereof.

REFERENCES:
patent: 2003/0169675 (2003-09-01), Kurokawa et al.
patent: 2003/0185047 (2003-10-01), Khouri et al.
patent: 2003/0209746 (2003-11-01), Horii
patent: 2005/0029505 (2005-02-01), Lowrey
patent: 2001-229690 (2001-08-01), None
patent: 2003-142653 (2003-05-01), None
patent: 2003-229538 (2003-08-01), None
patent: 2001-127263 (2004-05-01), None
Applied Physics vol. 71, No. 5 (2002) pp. 562-565.
Applied Physics vol. 71, No. 12 (2002) pp. 1513-1517.
Journal of Applied Physics vol. 54 (1983) p. 4877.

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