Phase change memory and method therefor

Details Phase change memory and method therefor Phase change memory and method therefor

2007-04-17

2007-04-17

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257S005000, C257S007000, C257S296000

Reexamination Certificate

active

10318984

ABSTRACT:
Briefly, in accordance with an embodiment of the invention, a phase change memory and a method to manufacture a phase change memory is provided. The phase change memory may include a memory material and a first tapered contact adjacent to the memory material. The phase change memory may further include a second tapered contact separated from the first tapered contact and adjacent to the memory material, wherein the first and second tapered contacts are adapted to provide a signal to the memory material.

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patent: 2003/0001230 (2003-01-01), Lowrey
patent: 2003/0183867 (2003-10-01), Fricke et al.

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