Phase change memories with improved programming characteristics

Details Phase change memories with improved programming characteristics Phase change memories with improved programming characteristics

2009-02-03

2011-11-22

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S238000, C438S381000, C257SE21006, C257SE21253, C257SE21316, C257SE21645, C257SE21646

Reexamination Certificate

active

08062921

ABSTRACT:
A phase change memory may be made with improved speed and stable characteristics over extended cycling. The alloy may be selected by looking at alloys that become stuck in either the set or the reset state and finding a median or intermediate composition that achieves better cycling performance. Such alloys may also experience faster programming and may have set and reset programming speeds that are substantially similar.

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