Phase change material for high density non-volatile memory

Details Phase change material for high density non-volatile memory Phase change material for high density non-volatile memory

2006-04-25

2009-12-15

Ip, Sikyin (Department: 1793)

Alloys or metallic compositions

Antimony base

C257S613000, C428S064100, C428S064500, C369S059110

Reexamination Certificate

active

07632456

ABSTRACT:
The present invention provides a phase change non-volatile memory material comprising a base material and at least one non-metallic light element selected from the group consisting of boron, carbon, nitrogen and oxygen, wherein the base material has a composition which corresponds to either that of congruent melting of the type with a minimum melting point or that of eutectic melting within the range of ±0.15 atomic fraction for each constituent element, thereby having a melting temperature of 600° C. or lower. The phase change non-volatile memory material according to the present invention may be utilized to reduce the electric power needed for reset/set operation and thermal interference between memory cells.

REFERENCES:
patent: 2003/0072241 (2003-04-01), Ogawa
patent: 2002264515 (2002-09-01), None

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