Phase change device with offset contact

Details Phase change device with offset contact Phase change device with offset contact

2011-05-31

2011-05-31

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S004000, C257S002000, C257SE45002

Reexamination Certificate

active

07952087

ABSTRACT:
A programmable resistance memory combines multiple cells into a block that includes one or more shared electrodes. The shared electrode configuration provides additional thermal isolation for the active region of each memory cell, thereby reducing the current required to program each memory cell.

REFERENCES:
patent: 2008/0123397 (2008-05-01), Liu

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