Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2011-05-17
2011-05-17
Kebede, Brook (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257SE31029, C438S095000
Reexamination Certificate
active
07943921
ABSTRACT:
A phase change memory element and method of forming the same. The memory element includes first and second electrodes. A first layer of phase change material is between the first and second electrodes. A second layer including a metal-chalcogenide material is also between the first and second electrodes and is one of a phase change material and a conductive material. An insulating layer is between the first and second layers. There is at least one opening in the insulating layer providing contact between the first and second layers.
REFERENCES:
patent: 4115872 (1978-09-01), Bluhm
patent: 4599705 (1986-07-01), Holmberg et al.
patent: 4809044 (1989-02-01), Pryor et al.
patent: 5177567 (1993-01-01), Klersy et al.
patent: 5363329 (1994-11-01), Troyan
patent: 5789758 (1998-08-01), Reinberg
patent: 5825046 (1998-10-01), Czubatyj et al.
patent: 5920788 (1999-07-01), Reinberg
patent: 6087674 (2000-07-01), Ovshinsky et al.
patent: 6656241 (2003-12-01), Hellring et al.
patent: 2003/0155589 (2003-08-01), Campbell et al.
patent: 2004/0245517 (2004-12-01), Campbell
patent: 2006/0226409 (2006-10-01), Burr et al.
patent: 2006/0266993 (2006-11-01), Suh et al.
patent: 0 269 225 (1988-06-01), None
patent: 1 724 850 (2006-11-01), None
patent: 2000-0052840 (2000-08-01), None
patent: WO 2006/110518 (2006-10-01), None
patent: WO 2006/110518 (2006-10-01), None
Lankhorst et al, Low-Cost and Nanoscale Non-Volatile Memory Concept for Future Silicon Chips, Nature Materials, vol. 4 pp. 347-352 (Apr. 2005).
Hudgens et al, Overview of Phase-Change Chalcogenide Novolatile Memory Technology, MRS Bulletin, Nov. 2004 pp. 829-832.
Lee et al, Full Integration and Cell Characteristics for 64 Mb Nonvolatile PRAM, 2004 Symposium on VLSI Technology Digest of Technical Papers, 2004 IEEE, pp. 20-21.
Hwang, et al, Full Integration and Reliability Evaluation of Phase-Change RAM Based on 0.24μm-CMOS Technologies, 2003 Symposium on VLSL Technology Digest of Technical Papers, pp. 173-174.
Wyttug, Phase-Change Materials Towards a Universal Memory?, Nature Materials, vol. 4, pp. 265-266 (Apr. 2005).
Lai et al, OUM—A 180 nm Nonvolatile Memory Cell Element Technology for Stand Alone and Embedded Applications, IEDM 01-803, pp. 36-5.1-36.5.4, 2001 IEEE.
Annex to Form PCT/ISA/206, “Communication Relating to the Results of the Partial International Search,” May 22, 2007.
Liang, M-C. et al., “Dieelectric Resolution Enhancement Coating Technology (DiRECT)—A Sub90 nm Space and Hole Patterning Technology Using 248-nm Lithography and Plasma-Enhanced Polymerization”, IEEE Electron Device Letters, Sep. 2003, pp. 562-564, vol. 24, No. 9.
International Preliminary Report on Patentability w/Written Opinion (12 pages), (Jul. 8, 2008).
Campbell Kristy A.
Daley Jon
Dickstein & Shapiro LLP
Kebede Brook
Micro)n Technology, Inc.
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