Perpendicular magnetic recording medium and magnetic storage...

Stock material or miscellaneous articles – Composite – Of inorganic material

Reexamination Certificate

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C428S690000, C428S336000, C428S611000, C428S900000

Reexamination Certificate

active

06881504

ABSTRACT:
A large-capacity magnetic storage apparatus is disclosed, capable of performing ultra-high density magnetic recording of 50 gigabits or more per 1 square inch. In a perpendicular magnetic recording medium having a non-magnetic intermediate layer and a magnetic recording layer sequentially formed, the non-magnetic intermediate layer is composed of a layer having a face-centered cubic structure and containing a non-magnetic elements excluding Pt. Specifically, the intermediate layer mainly contains at least one selected from the group of elements constituted of Al, Cu, Rh, Pd, Ag, Ir and Au, and is composed of a film having a face-centered cubic (f. c. c.) structure. The magnetic recording layer contains at least Co, Cr and Pt, and is composed of a film having a hexagonal close-packed (h. c. p.) structure. More preferably, a non-magnetic h. c. p. intermediate layer is provided between the non-magnetic intermediate layer and the magnetic recording layer.

REFERENCES:
patent: 6248419 (2001-06-01), Lambeth et al.
patent: 6562489 (2003-05-01), Abarra et al.
patent: 20010033949 (2001-10-01), Abarra et al.
patent: 06-076260 (1992-08-01), None
patent: 7-334832 (1994-06-01), None
patent: 8-129738 (1994-11-01), None
patent: 2000-099934 (1998-09-01), None
patent: 2001-143250 (1999-11-01), None
Machine translation of JP 2000-099934, Akimoto et al., published Apr. 2000.
Y. Hirayama, K. Ito, Y. Honda, N. Inaba, M. Futamoto, “Thermal Stability of CoCr-alloy Perpendicular Magnetic Recording Media”, Jornal of Magnetism and Magnetic Materials 193 (1999) pp. 253-257.
A. Sato, S. Nagagawa and M. Naoe, “Optimization of the Substrate Temperature for a Paramagnetic Seed Layer in a Co-Cr Perpendicular Recording Medium”, Dept. of Physical Electronics, Tokyo Institute of Technology, (Oct. 27, 1999 and Jan. 25, 2000), vol. 24, No. 4-2, pp. 267-270.

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