Perovskite-type oxide film, piezoelectric thin-film device...

Details Perovskite-type oxide film, piezoelectric thin-film device... Perovskite-type oxide film, piezoelectric thin-film device...

2009-09-15

2011-12-13

Luu, Matthew (Department: 2861)

Incremental printing of symbolic information

Ink jet

Ejector mechanism

C252S06290R, C252S06290R

Reexamination Certificate

active

08075105

ABSTRACT:
Provided is a perovskite-type oxide film having a perovskite-type crystal structure and containing lead as a chief component, which, when subjected to Raman microspectroscopy at a plurality of points on a surface thereof so as to measure Raman spectra upon application of an electric field of 100 kV/cm and upon application of no electric field, has a mean of absolute values of peak shift amounts that is 2.2 cm−1or less, with the peak shift amounts being found between Raman spectra in a range of 500 to 650 cm−1measured upon application of an electric field of 100 kV/cm and Raman spectra in the range of 500 to 650 cm−1measured upon application of no electric field. A production process and an evaluation method for such a film as well as a device using such a film are also provided.

REFERENCES:
patent: 2006/0046319 (2006-03-01), Takeda
patent: 2007/0138906 (2007-06-01), Tsukamoto
patent: 2008/0012908 (2008-01-01), Takeda et al.
patent: 2002-094023 (2002-03-01), None
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patent: 2005-350735 (2005-12-01), None
patent: 2007-116091 (2007-05-01), None
patent: 2007-173400 (2007-07-01), None
patent: 2007-258389 (2007-10-01), None
patent: 2008-42192 (2008-02-01), None
patent: WO-2007/034903 (2007-03-01), None

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