Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2011-04-26
2011-04-26
Thomas, Tom (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S183000, C257SE49001
Reexamination Certificate
active
07932505
ABSTRACT:
Provided is a material composition which allows a nonvolatile memory element made of a perovskite-type transition metal oxide having the CER effect to be formed of three elements, which comprises an electric conductor having a shallow work function or a small electronegativity, such as Ti, as an electrode and a rare earth-copper oxide comprising one type of rare earth element, copper and oxygen, such as La2CuO4, as a material constituting a heterojunction with the electric conductor.
REFERENCES:
patent: 6166947 (2000-12-01), Asamitsu et al.
patent: 7485937 (2009-02-01), Tokura et al.
patent: 2001/0032995 (2001-10-01), Maria et al.
patent: 2003/0219534 (2003-11-01), Zhuang et al.
patent: 2004/0061180 (2004-04-01), Hsu et al.
patent: 2004/0135183 (2004-07-01), Matsuura et al.
patent: 2006/0002174 (2006-01-01), Hosoi et al.
patent: 2006/0011942 (2006-01-01), Kim et al.
patent: 2007/0212572 (2007-09-01), Tokura et al.
patent: 2009/0034060 (2009-02-01), Tokura et al.
patent: 2009/0137398 (2009-05-01), Bozovic et al.
patent: 2010/0243980 (2010-09-01), Fukumizu
patent: 10-255481 (1998-09-01), None
patent: 2006-19444 (2006-01-01), None
patent: 2006-32898 (2006-02-01), None
Sawa, A. et al. “Hysteretic Current-Voltage Characteristics and Resistance Switching at a Rectifying Ti/Pr0.7Ca0.3MnO3 Interface”. Applied Physics Letters, vol. 85, No. 18 (pp. 4073-4075). Nov. 1, 2004.
Newns, D. M. et al. “Mott Transition Field Effect Transistor”. Applied Physics Letters, vol. 72, No. 6 (pp. 780-782). Aug. 10, 1998.
Sawa, A. et al. “Colossal Electro-Resistance Memory Effect at Metal/La2CuO4 Interfaces”. Japanese Journal of Applied Physics, vol. 44, No. 40 (pp. L1241-L1243). Sep. 26, 2005.
Sawa, A. “Resistive Switching in Transition Metal Oxides”. Materials Today, vol. 11, No. 6 (pp. 28-36). Jun. 2008.
Tulina, et al.—“Reversible electrical switching at the Bi2Sr2CaCu2O8+ysurface in the normal metal—Bi2Sr2CaCu2O8+y single crystal heterojunction”—Physica C (2001), pp. 23-30.
U.S. Appl. No. 11/886,734 filed Sep. 19, 2007 entitled “Nonvolatile Memory Element”.
International Search Report mailed Apr. 25, 2006.
Baikalov et al.: “Field-driven hysteretic and reversible resistive switch at the Ag-Pr0.7Ca0.3MnO3interface;”Applied Physics Letters, vol. 83, No. 5, Aug. 4, 2003, pp. 957-959.
Tsui et al.: “Field-induced resistive switching in metal-oxide interfaces,”Applied Physics Letters, vol. 85, No. 2, Jul. 12, 2004, pp. 317-319.
Tulina et al.: “Reversible electrical switching at the Bi2Sr2CaCu2O8+ysurface in the normal metal—Bi2Sr2CaCu2O8+ysingle crystal heterojunction,”Physica, C 366 (2001) pp. 23-30.
Fujii Takeshi
Kawasaki Masashi
Sawa Akihito
Tokura Yoshinori
National Institute of Advanced Industrial Science and Technology
Nixon & Vanderhye P.C.
Roland Christopher M
Thomas Tom
LandOfFree
Perovskite transition metal oxide nonvolatile memory element does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Perovskite transition metal oxide nonvolatile memory element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Perovskite transition metal oxide nonvolatile memory element will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2727900