Incremental printing of symbolic information – Ink jet – Ejector mechanism
Reexamination Certificate
2011-08-16
2011-08-16
Luu, Matthew (Department: 2861)
Incremental printing of symbolic information
Ink jet
Ejector mechanism
C423S598000, C423S263000, C423S508000, C252S06290R, C310S358000, C310S365000, C204S192180
Reexamination Certificate
active
07997692
ABSTRACT:
A process for producing a perovskite oxide having a composition expressed by the compositional formulas A(B, C)O3, and determined so as to satisfy the conditions (1), (2), and (3), 0.98<TF(PX)<1.01, (1) TF(ABO3)>1.0, and (2) TF(ACO3)<1.0, (3) where each of A, B, and C represents one or more metal elements, the main component of one or more A-site elements is bismuth, the composition of one or more B-site element represented by B is different from the composition of one or more B-site element represented by C, TF(PX) is the tolerance factor of the oxide expressed by the compositional formula A(B, C)O3, and TF(ABO3) and TF(ACO3) are respectively the tolerance factors of the oxides expressed by the compositional formulas ABO3and ACO3.
REFERENCES:
patent: 4748143 (1988-05-01), Tabata et al.
patent: 5306411 (1994-04-01), Mazanec et al.
patent: 7216962 (2007-05-01), Miyazawa et al.
patent: 2003/0031622 (2003-02-01), Eitel et al.
patent: 61-283348 (1986-12-01), None
patent: 6-56428 (1994-03-01), None
patent: 2000-133848 (2000-05-01), None
patent: 2003-277146 (2003-10-01), None
patent: 2005-39166 (2005-02-01), None
Shannon “Revised Effective Ionic Radii and Systematic Studies of Interatomic Distances in Halides and Chalcogenides”, Acta Crystallographica, A32, (1976), pp. 751-767.
Hosono et al., “High-Efficiency Piezoelectric Single Crystals”, Toshiba Review, vol. 59, No. 10, (2004), pp. 39-42.
Belik et al., “High-Pressure Synthesis, Crystal Structures, and Properties of Perovskite-like BiALO3and Pyroxene-like, BiGaO3”, Chemistry of materials, vol. 18, (2006), pp. 133-139.
Yasui et al., “Formation of BiFeO3-BiScO3Thin Films and Their Electrical Properties”, Japanese Journal of Applied Physics, vol. 45, No. 9B, (2006), pp. 7321-7324.
Park et at., “Ultrahigh strain and piezoelectric behavior in relaxor based ferroelectric single crystals”, Journal of Applied Physics, vol. 82, No. 4, Aug. 15, 1997, pp. 1804-1811.
Ganguly et al., “Use of an AX3close-packing description of layered perovskites in understanding the role of various A ions in cuprate superconductors”, Physica C, vol. 208, (1993), pp. 307-322.
Sakashita Yukio
Sasaki Tsutomu
Birch Stewart Kolasch & Birch, LLP.
FUJIFILM Corporation
Luu Matthew
Solomon Lisa M
LandOfFree
Perovskite oxide, process for producing the same,... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Perovskite oxide, process for producing the same,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Perovskite oxide, process for producing the same,... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2773323