Permeable base transistor having selectively grown emitter

Details Permeable base transistor having selectively grown emitter Permeable base transistor having selectively grown emitter

1993-02-08

1993-12-28

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With base region having specified doping concentration...

257197, 257198, H01L 2972

Patent

active

052742660

ABSTRACT:
A permeable base transistor has an emitter layer or emitter layer sequence composed of a semiconductor material which has a greater energy band gap than a semiconductor material of a base layer. This emitter layer or emitter layer sequence is selectively grown into an opening of the base layer and onto a collector layer situated therebelow.

REFERENCES:
patent: 4712122 (1987-12-01), Nishizawa et al.
patent: 4901121 (1990-02-01), Gibson et al.
Surface Science 174 (1986), "Current Prospects for the Permeable Base Transistor" by Carl O. Bozler, pp. 487-500.
IEEE Transactions on Electron Devices, vol. ED-34, No. 8, Aug., 1987 "Ion-Sensing Devices with Silicon Nitride and Borosilicate Glass Insulators", by David L. Harame et al, pp. 1700-1707.
Microwave Journal, Jul., 1987 "Performance and Producibility of the GaAs Permeable Base Transistor," by R. Allen Murphy and James D. Murphy, pp. 101-116.
SPIE vol. 797, Advanced Processing of Semiconductor Devices (1987), Advances in the Technology for the Permeable Base Transistor, by M. A. Hollis et al, pp. 335-347.

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