Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1994-07-23
1996-07-30
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257266, 257287, 257523, 257592, H01L 2974, H01L 31111
Patent
active
055414249
DESCRIPTION:
BRIEF SUMMARY
CROSS REFERENCE TO RELATED APPLICATION
This application is a national phase of PCT/DE 92/01080 filed 19 Dec. 1992 and based, in turn on German national applications P 41 42 654.1 filed 23 Dec. 1991, and P 41 41 42 595.2 of 23 Dec. 1991 under the International Convention.
FIELD OF THE INVENTION
The invention relates to an electronic component, especially a p-channel or n-channel permeable base transistor [PBT] with a plurality of layers, fabricated in a laminated composite, and with at least one laterally structured layer provided for controlling a space charge zone, especially a base of the electronic component.
The invention further relates to a process for manufacturing such a component.
BACKGROUND OF THE INVENTION
For use in super computers and fast data networks in the context of information technology, there are under development integrated circuits as fast microwave components. Of greater significance are integrated circuits on GaAs chips. Components which have been used hitherto in this context are the MESFET and the HEMT. They both are so-called field effect transistors (FET), in which the current transport is parallel to the surface of the chip. An important speed determining parameter, the so-called "transit time under the gate" is here limited by the smallest lateral structuring of the gate achievable lithographically.
The permeable base transistor (PBT) proposed already in 1979, also deals with the principle of a field effect transistor, although with a current flow direction perpendicular to the chip surface, in which the "transit time under the gate" was significantly reduced.
This had its basis in that the gate length in the vertical structuring was given by the thickness of the epitactically deposited base layer. With the methods of modern epitaxy, like modular beam epitaxy (MBE), metal organic gas phase epitaxy (MOCVD) or metal organic molecular beam epitaxy (MOMBE, CBE, GSMBE) for production of the metallic structured base, layer thicknesses in the range of several atom layers can be produced in a controlled manner.
German Patent Application DE 40 25 269.8 describes a permeable base transistor of GaAs. Several layers are bonded with one another to form the active elements of the components, namely, emitter, base and collector. The lateral finger-like structured base forms at its boundary surface a pn transition with the material surrounding it. These components as a result of this characteristic have also been designated as permeable junction base transistors (PJBT). The thus formed space charge zone is controllable via the highly doped conductive base. The basic material for the region surrounding the base and to which the current channels between the fingers of the base belong, is GaAs with an n-doping in the range of 10.sup.17 to 10.sup.18 cm.sup.-3. The p-doping of the base in the range of 10.sup.20 to 10.sup.21 cm.sup.-3 is achieved with the aid of a carbon doping.
The space charge zones formed on the boundary surface of the base are used for control of the electric current in the region of the current channels with the aid of a suitable voltage bias on the base. In this case it is a disadvantage that in the remaining space charge zone in the region of the lateral boundary surface of the base layer and spreading out therefrom, there is a parasitic space charge capacitance which limits the switching speed of the component disadvantageously.
OBJECTS OF THE INVENTION
It is an object of the invention to provide an electronic component of the type described in which this effect is reduced and which enables an increased switching speed. It is also an object to provide a corresponding method of making such a component.
SUMMARY OF THE INVENTION
These objects are achieved with an electronic component
wherein: a pn- transition is provided as the space charge zone with a p- conducting and a n- conducting layer,
the laterally structured base is provided as one of the two layers forming the pn transition, and
at least on one, especially on both of the two lateral boundary surfaces of
REFERENCES:
patent: 3381189 (1968-04-01), Hinkle, Jr. et al.
patent: 3767982 (1973-10-01), Teszner et al.
patent: 4903089 (1990-02-01), Hollis et al.
patent: 5122853 (1992-06-01), Luth
Dubno Herbert
Forschungszentrum Julich GmbH
Limanek Robert P.
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