Permeable base transistor having an electrode configuration for

Details Permeable base transistor having an electrode configuration for Permeable base transistor having an electrode configuration for

1988-01-05

1992-10-13

Jackson, Jr., Jerome

357 34, H01L 2980, H01L 2972

Patent

active

051555611

ABSTRACT:
The base layer of a power permeable base transistor is formed as comb structures with grating teeth of the combs extending into active regions of semiconductor material. Extended active regions are separated by inactive regions over which collector contacts extend. Large devices have digitated base layers. The comb structures are fabricated by sputtering a uniform layer of tungsten and forming a nickel mask over the tungsten by both X-ray and photolithography techniques. The tungsten exposed by the nickel mask is then etched to leave the comb structures.

REFERENCES:
patent: 3946334 (1976-03-01), Yonezu et al.
patent: 4086611 (1978-04-01), Nishizawa
patent: 4378629 (1983-04-01), Bozler et al.
patent: 4735918 (1988-04-01), Parsons et al.
patent: 4901121 (1990-02-01), Gibson et al.
patent: 4903090 (1990-02-01), Yokoyama
patent: 5106778 (1992-04-01), Hollis et al.
Halliday et al., Fundamentals of Physics, 1981, pp. 356-358.
Bozler et al., "Fabrication and Numerical Simulation of the Permeable Base Transistor," IEEE on Elec. Dev., Jun. 1980, pp. 1128-1141.
IBM, "Multiple Grid Permeable Transistor," IBM Tech. Discl. Bulletin, Oct. 1988, pp. 40-43.
Kenji Kani et al., "Heat Transfer Analysis of Beam-Lead Transistor," Electronics and Communications in Japan, vol. 53-C, No. 6, 1970, pp. 157-164.

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